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NDF04N60Z, NDD04N60Z
Power MOSFET, N-Channel,
600 V, 2.0 W
•FeLatouwreOsN Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
VDSS
600
V
Continuous Drain Current RqJC (Note 1)
ID
4.8 4.1 A
Continuous Drain Current RqJC, TA = 100°C (Note 1)
ID
3.0 2.6 A
Pulsed Drain Current,
IDM
VGS @ 10V
Power Dissipation RqJC
PD
Gate−to−Source Voltage
VGS
Single Pulse Avalanche Energy, ID = 4.0 EAS A
20
20
A
30
83 W
±30
V
120
mJ
ESD (HBM) (JESD22−A114)
Vesd
3000
V
RMS Isolation Voltage
VISO
4500
−
V
(t = 0.3 sec., R.H.
NDD04N60Z Datasheet
