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MSQA6V1W5T2G Datasheet, ON Semiconductor

MSQA6V1W5T2G array equivalent, esd protection diode array.

MSQA6V1W5T2G Avg. rating / M : 1.0 rating-11

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MSQA6V1W5T2G Datasheet

Features and benefits


* Low Clamping Voltage
* Stand Off Voltage 3 V
* Low Leakage < 1 mA @ 3 V
* SC−88A Package Allows Four Separate Unidirectional Configurations
* IEC100.

Application

requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment suc.

Description

of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ V.

Image gallery

MSQA6V1W5T2G Page 1 MSQA6V1W5T2G Page 2 MSQA6V1W5T2G Page 3

TAGS

MSQA6V1W5T2G
ESD
Protection
Diode
Array
MSQA6V1W5T2
MSQA6V1W5
MSQ108N06G
ON Semiconductor

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