MJB45H11G transistor equivalent, pnp transistor.
* Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A
* Fast Switching Speeds
* Complementary Pairs Simplifies Designs
* Epoxy Meets.
such as switching regulators, converters and power amplifiers.
Features
* Low Collector−Emitter Saturation Voltage .
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