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MJB44H11 - Silicon NPN Power Transistor

Description

Low Collector-Emitter saturation voltage Pb-free package are available Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose amplification and switching such as out or driver stages in applicatio

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isc Silicon NPN Power Transistor MJB44H11 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Pb-free package are available ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO VEBO IC ICP PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Total Power Dissipation @ Ta=25℃ Total Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 80 V 5 V 10 A 20 A 2 W 50 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PAR
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