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ISL9R3060P2 - Diode

Download the ISL9R3060P2 datasheet PDF (ISL9R3060G2 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for diode.

Description

optimized for low loss performance in high frequency hard switched applications.

The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions.

Features

  • Stealth Recovery, trr = 36 ns (@ IF = 30 A).
  • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C).
  • 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ISL9R3060G2-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

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STEALTHt Diode 30 A, 600 V ISL9R3060G2, ISL9R3060P2 Description The ISL9R3060G2, ISL9R3060P2 is a STEALTH t diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry.
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