Datasheet4U Logo Datasheet4U.com

ISL9V2540S3ST-F085C - N-Channel IGBT

Datasheet Summary

Features

  • SCIS Energy = 250 mJ at TJ = 25°C.
  • Logic Level Gate Drive.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet preview – ISL9V2540S3ST-F085C
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
ECOSPARK) Ignition IGBT 250 mJ, 400 V, N-Channel Ignition IGBT ISL9V2540S3ST-F085C Features • SCIS Energy = 250 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector to Emitter Breakdown Voltage BVCER 430 V (IC = 1 mA) Emitter to Collector Voltage − Reverse BVECS 24 V Battery Condition (IC = 10 mA) ISCIS = 12.9 A, L = 3.0 mHy, RGE = 1 kW, TC = 25°C (Note 1) ESCIS25 250 mJ ISCIS = 10 A, L = 3.0 mHy, RGE = 1 kW, TC = 150°C (Note 2) ESCIS150 150 mJ Collector Current Continuous, at VGE = 4.
Published: |