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HUFA76407DK8T-F085 - Dual N-Channel MOSFET

Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon are

Features

  • General.

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HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET HUFA76407DK8T-F085 Dual N-Channel Logic Level UltraFET® Power MOSFET 60 V, 3.5 A, 105 mΩ Features General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process  Ultra-Low On-Resistance rDS(on) = 0.090 at VGS = 10 V  Ultra-Low On-Resistance rDS(on) = 0.105 at VGS = 5 V technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is  Peak Current vs Pulse Width Curve capable of withstanding high energy  UIS Rating Curve in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
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