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HUF75345P3 - N-Channel Power MOSFET

This page provides the datasheet information for the HUF75345P3, a member of the HUF75345G3 N-Channel Power MOSFET family.

Datasheet Summary

Description

These N

the innovative UltraFET process.

resistance per silicon area, resulting in outstanding performance.

Features

  • 75 A, 55 V.
  • Simulation Models.
  • Temperature Compensated PSPICEt and SABER® Models.
  • Thermal Impedance SPICE and SABER Models.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • These Devices are Pb.
  • Free www. onsemi. com VDSS 55 V RDS(ON) MAX 7 mW D ID MAX 75 A G S DRAIN (TAB) TO.
  • 247.
  • 3 CASE 340CK G D S GDS DRAIN (FLANGE) TO.
  • 220.
  • 3 CASE 340AT DRAIN (FLANGE) G S D2PAK.
  • 3 CASE 418AJ.

📥 Download Datasheet

Datasheet preview – HUF75345P3

Datasheet Details

Part number HUF75345P3
Manufacturer ON Semiconductor
File Size 598.04 KB
Description N-Channel Power MOSFET
Datasheet download datasheet HUF75345P3 Datasheet
Additional preview pages of the HUF75345P3 datasheet.

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Full PDF Text Transcription

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MOSFET – Power, N-Channel, UltraFET 55 V, 75 A, 7 mW HUF75345G3, HUF75345P3, HUF75345S3S Description These N−Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on−resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low−voltage bus switches, and power management in portable and battery−operated products.
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