HGTG40N60B3 datasheet, igbt equivalent, ON Semiconductor

Features and benefits

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−st.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Description

Symbol Ratings Units Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 70 A IC110 40 Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous ICM 330 A VGES ±20 V Ga.

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