HGTG40N60B3 igbt equivalent, n-channel igbt.
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−st.
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.
Symbol
Ratings
Units
Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous At TC = 25°C At TC = 110°C
IC25
70
A
IC110
40
Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous
ICM
330
A
VGES
±20
V
Ga.
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