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S E M I C O N D U C T O R
HGTG40N60B3
70A, 600V, UFS Series N-Channel IGBT
Package
JEDEC STYLE TO-247
E C G
PRELIMINARY
May 1995
Features
• 70A, 600V at TC = +25 C • Square Switching SOA Capability • Typical Fall Time - 160ns at +150oC • Short Circuit Rating • Low Conduction Loss
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Description
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
HGTG40N60B3 Datasheet
