HGTG20N60A4 igbt equivalent, igbt.
of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operatin.
operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switchi.
The HGTG20N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low condu.
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