FQPF27P06 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* −17 A, −60 V, RDS(on) = 70 mW (Max.) @ VGS = −10 V, ID = −8.5 A
* Low Gate Charge (Typ. 33 nC)
* Low Crss (Typ. 120 pF)
* 100% Avalanche Tested
* 17.

Application

Features
* −17 A, −60 V, RDS(on) = 70 mW (Max.) @ VGS = −10 V, ID = −8.5 A
* Low Gate Charge (Typ. 33 nC)
*.

Description

This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switc.

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