Datasheet Details
| Part number | FQPF22N50 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 359.59 KB |
| Description | 22A N-Channel MOSFET |
| Datasheet |
 FQPF22N50 Datasheet
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Download the FQPF22N50 datasheet PDF. This datasheet also includes the FQP22N50 variant, as both parts are published together in a single manufacturer document.
| Part number | FQPF22N50 |
|---|---|
| Manufacturer | Oucan Semi |
| File Size | 359.59 KB |
| Description | 22A N-Channel MOSFET |
| Datasheet |
FQPF22N50 Datasheet
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Product Summary The FQP22N50 & FQPF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 600V@150℃ 22A < 0.26Ω TO-220 Top View TO-220F D G S Orderable Part Number FQP22N50L FQPF22N50 Package Type TO220 Green TO-220F Pb Free Form Tube Tube Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP22N50 Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 22 15 TC=25°C Power Dissipation B Derate above 25oC PD 417 3.3 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP22N50 65 0.5 Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
0.3 FQB22N50 500 ±30 22* 15* 88 7 735 1470 5 50 0.4 -55 to 150 300 FQB22N50 65 -2.5 FQPF22N50 22* 15* 39 0.3 FQPF22N50 65 -3.2 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain
FQP22N50/FQPF22N50 500V,22A N-Channel MOSFET General.
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| FQPF2N60 | 2A N-Channel MOSFET |
| FQPF10N60 | N-Channel MOSFET |
| FQPF10N65 | 10A N-Channel MOSFET |
| FQPF12N50 | 12A N-Channel MOSFET |
| FQPF12N60 | 12A N-Channel MOSFET |
| FQPF12N65 | 12A N-Channel MOSFET |
| FQPF4N60 | 4A N-Channel MOSFET |
| FQPF4N65 | 4A N-Channel MOSFET |
| FQPF5N50 | 5A N-Channel MOSFET |