logo

FQN1N60C Datasheet, ON Semiconductor

FQN1N60C mosfet equivalent, n-channel mosfet.

FQN1N60C Avg. rating / M : 1.0 rating-11

datasheet Download

FQN1N60C Datasheet

Features and benefits


* 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V, ID = 0.15 A
* Low Gate Charge (Typ. 4.8 nC)
* Low Crss (Typ. 3.5 pF)
* 100% Avalanche Tested ABSOLU.

Description

This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switc.

Image gallery

FQN1N60C Page 1 FQN1N60C Page 2 FQN1N60C Page 3

TAGS

FQN1N60C
N-Channel
MOSFET
FQN1N50C
FQNL1N50B
FQNL2N50B
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts