FQN1N50C mosfet equivalent, n-channel qfet mosfet.
* 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A
* Low Gate Charge (Typ. 4.9 nC)
* Low Crss (Typ. 4.1 pF)
* 100% Avalanche Tested
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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superi.
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