Datasheet Details
| Part number | FQD3P50TM-F085 |
|---|---|
| Manufacturer | onsemi |
| File Size | 1.12 MB |
| Description | 500V P-Channel MOSFET |
| Datasheet |
 FQD3P50TM-F085 Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.
Key Features
- -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V.
- Low gate charge ( typical 18 nC).
- Low Crss ( typical 9.5 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- Qualified to AEC Q101.
- RoHS Compliant S D ! GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Conti.