FQD3P50 - P-Channel MOSFET

onsemi

General Description

This P

using ON Semiconductor’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanch

Key Features

2.1 A,.
500 V, RDS(on) = 4.9 W (Max. ) @ VGS =.
10 V, ID =.
1.05 A.
Low Gate Charge (Typ. 18 nC).
Low Crss (Typ. 9.5 pF).
100% Avalanche Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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FQD3P50 p-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQD3P50
Manufacturer	onsemi
File Size	390.12 KB
Description	P-Channel MOSFET
Datasheet	FQD3P50 Datasheet

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MOSFET – P-Channel, QFET) -500 V, 4.9 W, -2.1 A FQD3P50 Description This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • −2.1 A, −500 V, RDS(on) = 4.9 W (Max.) @ VGS = −10 V, ID = −1.05 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 9.