FQD16N25C datasheet, mosfet equivalent, ON Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 320.05KB)

Features and benefits

* 16 A, 250 V RDS(on) = 270 mW (Max.) @ VGS = 10 V, ID = 8 A
* Low Gate Charge (Typ. 41 nC)
* Low Crss (Typ. 68 pF)
* 100% Avalanche Tested
* This Dev.

Description

This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching perfo.

Image gallery