* 16 A, 250 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 8 A
* Low Gate Charge (Typ. 41 nC)
* Low Crss (Typ. 68 pF)
* 100% Avalanche Tested November 201.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts