FQB25N33TM-F085 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 25A, 330V, RDS(on) = 0.23Ω @VGS = 10V
* Low gate charge (typical 58nC)
* Low Crss (typical 40pF)
* Fast switching
* 100% avalanche tested
* Impr.

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimized on-state resistance, provide superio.

Image gallery