FQB22P10TM-F085 mosfet equivalent, p-channel mosfet.
* -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
* Low gate charge ( typical 40 nC)
* Low Crss ( typical 160 pF)
* Fast switching
* 100% avalanche tested .
such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
* -22A, -100V, .
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior s.
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