FGHL40T120RWD datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* Low Conduction Loss and Optimized Switching
* Maximum Junction Temperature − TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
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Application

like motor control, UPS, data center and high−power switch. Features
* Low Conduction Loss and Optimized Switching <.

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGHL40T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in variou.

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