Datasheet4U Logo Datasheet4U.com

FGHL50T65MQD - IGBT

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Smooth & Optimized Switching.
  • Tight Parameter Distribution.
  • RoHS Compliant Typical.

📥 Download Datasheet

📁 Similar Datasheet

  • FGH15T120SMD - 15 A Field Stop Trench IGBT (Fairchild Semiconductor)
  • FGH20N60SFD - 20A Field Stop IGBT (Fairchild Semiconductor)
  • FGH20N60SFDTU_F085 - 20A Field Stop IGBT (Fairchild Semiconductor)
  • FGH20N60UFD - 20A Field Stop IGBT (Fairchild Semiconductor)
  • FGH20N6S2 - 600V/ SMPS II Series N-Channel IGBT (Fairchild Semiconductor)
  • FGH20N6S2D - 600V/ SMPS II Series N-Channel IGBT (Fairchild Semiconductor)
  • FGH25N120FTDS - IGBT (Fairchild Semiconductor)
  • FGH25T120SMD - IGBT (Fairchild Semiconductor)
  • FGH30N120FTD - Trench IGBT (Fairchild Semiconductor)
  • FGH30N60LSD - IGBT (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQD Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.
Published: |