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FGHL50T65MQD - IGBT

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts are Tested for ILM (Note 2).
  • Smooth & Optimized Switching.
  • Tight Parameter Distribution.
  • RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Field Stop Trench IGBT 650 V, 50 A FGHL50T65MQD Field stop 4th generation mid speed IGBT technology and full current rated copak Diode technology. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.