FGH60N60SF datasheet, igbt equivalent, ON Semiconductor

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datasheet Download (Size : 393.79KB)

Features and benefits

* High Current Capability
* Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 60 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Fr.

Application

where low conduction and switching losses are essential. Features
* High Current Capability
* Low Saturation Vol.

Description

Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features
* High Current Capabi.

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