FGH60N60SF igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 60 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Fr.
where low conduction and switching losses are essential.
Features
* High Current Capability
* Low Saturation Vol.
Using novel field stop IGBT technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
Features
* High Current Capabi.
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