FGH60N60 datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for easy Parallel Operating
* High Current Capability
* Low Saturation Volt.

Application

where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ = 175°C
* P.

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are es.

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