FGH50T65SQD igbt equivalent, igbt.
* Max Junction Temperature TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: .
where low conduction and switching losses are essential.
Features
* Max Junction Temperature TJ = 175°C
* Positi.
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are es.
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