* Max Junction Temperature 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(s.

* Induction Heating, MWO www.onsemi.com VCES 650 V IC 40 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH.

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching ap.

FGH40T65UPD

FGH40T65SH

FGH40T65SHD

FGH40T65SHDF

FGH40T65SPD

FGH40T65SPD-F085

FGH40T65SQD

FGH40T100SMD

FGH40T100SMD-F155

FGH40T120SMD

FGH40T120SMD-F155

FGH40T120SMDL4

FGH40T120SMD_F155

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