FGH40T65UQDF igbt equivalent, igbt.
* Max Junction Temperature 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(s.
* Induction Heating, MWO
www.onsemi.com
VCES 650 V
IC 40 A
C
G E
E C G
COLLECTOR (FLANGE)
TO−247−3LD CASE 340CH.
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching ap.
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