FGH40T65SHDF igbt equivalent, igbt.
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.
* Induction Heating, MWO
www.onsemi.com
C
G E E C G COLLECTOR (FLANGE)
TO−247−3LD CASE 340CH
MARKING DIAGRAM
$Y&Z&3.
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching ap.
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