FGH40N60SMD igbt equivalent, igbt.
* Maximum Junction Temperature : TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Vol.
where low conduction and switching losses are essential.
Features
* Maximum Junction Temperature : TJ = 175°C
* .
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are es.
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