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FGH40N6S2D - 600V/ SMPS II Series N-Channel IGBT

General Description

The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS).

These LGC devices shorten delay times, and reduce the power requirement of the gate drive.

Key Features

  • 100kHz Operation at 390V, 24A.
  • 200kHZ Operation at 390V, 18A.
  • 600V Switching SOA Capability.
  • Typical Fall Time.
  • . 85ns at TJ = 125oC.
  • Low Gate Charge.
  • . . . . 35nC at VGE = 15V.
  • Low Plateau Voltage.
  • . . .6.5V Typical.
  • UIS Rated.
  • 260mJ.
  • Low Conduction Loss IGBT (co-pack) formerly Developmental Type TA49340 Diode formerly Developmental Type.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGH40N6S2D July 2002 FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.