FGH25T120SMD datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* FS Trench Technology, Positive Temperature Coefficient
* High Speed Switching
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 25 A
* 100% of the Parts.

Application

Features
* FS Trench Technology, Positive Temperature Coefficient
* High Speed Switching
* Low Saturation V.

Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features
* FS Tren.

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