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FGH25N120FTDS Datasheet, ON Semiconductor

FGH25N120FTDS igbt equivalent, igbt.

FGH25N120FTDS Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 443.94KB)

FGH25N120FTDS Datasheet

Features and benefits


* High Speed Switching
* Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A
* High Input Impedance
* These Device is Pb−Free and is RoHS Compliant Appli.

Application

Features
* High Speed Switching
* Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A
* High Input Impedan.

Description

Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features
* High Speed Switching
* Low S.

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TAGS

FGH25N120FTDS
IGBT
ON Semiconductor

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