FGH25N120FTDS datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* High Speed Switching
* Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A
* High Input Impedance
* These Device is Pb−Free and is RoHS Compliant Appli.

Application

Features
* High Speed Switching
* Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A
* High Input Impedan.

Description

Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features
* High Speed Switching
* Low S.

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