FGH12040WD igbt equivalent, igbt.
* Maximum Junction Temperature: TJ =175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ .
where low conduction and switching losses are essential.
Features
* Maximum Junction Temperature: TJ =175°C
* Po.
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential.
Features
* Maximum Junction Te.
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