FGH20N60UFD Datasheet, ON Semiconductor

FGH20N60UFD igbt equivalent, igbt.

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Features and benefits

* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Free and .

Application

where low conduction and switching losses are essential. Features
* High Current Capability
* Low Saturation Vo.

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