FGAF40S65AQ datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.

Application

and welder where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ = 17.

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential. Features
* Maxim.

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