FGAF30S65AQ datasheet, igbt equivalent, ON Semiconductor

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Features and benefits

* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.

Application

and welder where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ = 1.

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TAGS

FGAF30S65AQ

IGBT

ON Semiconductor

Manufacturer

ON Semiconductor (https://www.onsemi.com/)

Related datasheet

FGAF30S65AQ Datasheet, ON Semiconductor

Features and benefits

Application