FGA25N120ANTDTU igbt equivalent, npt trench igbt.
* NPT Trench Technology, Positive Temperature Coefficient
* Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
* Low Switching Loss: Eoff.
* Induction Heating, Microwave Oven
Description
Using ON Semiconductor's proprietary trench design and advanced NPT.
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-n.
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