FGA25N120ANTD_F109 Datasheet | Fairchild Semiconductor

Features - NPT Trench Technology, Positive Temperature Coefficient - Low Saturation Voltage: VCE(sat), typ = 2.0 V  @ IC = 25 A and TC = 25C - Low Switching Loss: Eoff, typ = 0.96 m J  @ IC = 25 A and TC = 25C - Extremely Enhanced Avalanche Capability Applications - Induction Heating, Microwave Oven Description Using Fairchild®'s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven. TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector...