FFSP08120A datasheet, diode equivalent, ON Semiconductor

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datasheet Download (Size : 222.62KB)

Features and benefits

* Max Junction Temperature 175 °C
* Avalanche Rated 80 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.

Application

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits November 2016 Description Silicon .

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

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