FFSP05120A diode equivalent, silicon carbide schottky diode.
* Max Junction Temperature 175 °C
* Avalanche Rated 55 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.
* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits
Description
Silicon Carbide (SiC) .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 527.08KB)