* −25 V, −0.46 A Continuous, −1.5 A Peak
* RDS(on) = 1.1 W @ VGS = −4.5 V
* RDS(on) = 1.5 W @ VGS = −2.7 V
* Very Low Level Gate Drive Requirements Allowi.

such as notebook computers and cellular phones. This device has excellent on−state resistance even at gate drive voltage.

This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device .

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