FDV301N-F169 datasheet, fet equivalent, ON Semiconductor

Features and benefits

* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct.

Application

as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace seve.

Description

This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has bee.

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