FDV302P Datasheet Digital Fet/ P-channel

Manufacturer: Fairchild (now onsemi)

Overview: October 1997 FDV302P Digital FET, P-Channel General.

Datasheet Details

Part number	FDV302P
Manufacturer	Fairchild (now onsemi)
File Size	63.55 KB
Description	Digital FET/ P-Channel
Datasheet	FDV302P_FairchildSemiconductor.pdf

This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage applications as a replacement for digital transistors.

-25 V, -0.12 A continuous, -0.5 A Peak. RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Replace many PNP digital transistors (DTCx and DCDx) with one DMOS FET. SOT-23 Mark:302 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D G S Absolute Maximum Ratings Symbol VDSS.

Brand Logo	Part Number	Description	Manufacturer
	FDV302P	P-Channel Digital FET	ON Semiconductor