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FDS6986AS - Dual Notebook Power Supply N-Channel FET

Description

The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.

Features

  • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 7.9A, 30V RDS(on) = 20 mΩ @ VGS = 10V RDS(on) = 28 mΩ @ VGS = 4.5V.
  • Q1: Optimized for low switching losses Low gate charge (10 nC typical) 6.5A, 30V RDS(on) = 29 mΩ @ VGS = 10V RDS(on) = 38 mΩ @ VGS = 4.5V D2D/S21/S1D1 D1 D D D D G2 S2 G1S1/D2 SO-8 Pin 1 SO-8 G SS S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Volt.

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Datasheet Details

Part number FDS6986AS
Manufacturer onsemi
File Size 554.82 KB
Description Dual Notebook Power Supply N-Channel FET
Datasheet download datasheet FDS6986AS Datasheet

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Full PDF Text Transcription

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FDS6986AS FDS6986AS Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™ General Description The FDS6986AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology.
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