FDS6982AS
Description
The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook puters and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, Power Trench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using ON Semiconductor’s monolithic Sync FET technology.
Applications
- Notebook
Features
- Q2: Optimized to minimize conduction losses Includes Sync FET Schottky body diode
8.6A, 30V
RDS(on) max= 13.5mΩ @ VGS = 10V RDS(on) max= 16.5mΩ @ VGS = 4.5V
- Low gate charge (21n C typical)
- Q1: Optimized for low switching losses
6.3A, 30V
RDS(on) max= 28.0mΩ @ VGS = 10V RDS(on) max= 35.0mΩ @ VGS = 4.5V
- Low gate charge (11n C...
