FDPF2710T mosfet equivalent, n-channel mosfet.
* RDS(on) = 36.3 mW (Typ.) @ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on).
* Consumer Appliances
* Synchronous Rectification
DATA SHEET www.onsemi.com
VDS 250 V
RDS(on) MAX 42.5 mW @ 1.
This N−Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
Features
* RDS(on) = 36.3 mW (Typ.) @ VGS = 10 V, ID = 25 A .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 287.56KB)