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FDPF24N40 - N-Channel MOSFET

Download the FDPF24N40 datasheet PDF. This datasheet also covers the FDP24N40 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.140Ω ( Typ. )@ VGS = 10V, ID = 12A.
  • Low gate charge ( Typ. 46nC).
  • Low Crss ( Typ. 25pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improve dv/dt capability.
  • RoHS compliant UniFETTM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP24N40_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FDPF20N50 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP24N40 / FDPF24N40 N-Channel MOSFET www.DataSheet4U.com December 2007 FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A • Low gate charge ( Typ. 46nC) • Low Crss ( Typ. 25pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.