* DUAL COOL Top Side Cooling PQFN package
* Max rDS(on) = 0.99 mW at VGS = 10 V, ID = 36 A
* Max rDS(on) = 1.55 mW at VGS = 4.5 V, ID = 32 A
* High perfor.

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extreme.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts