FDMS7658AS
Features
- Max r DS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
- Max r DS(on) = 2.2 mΩ at VGS = 7 V, ID = 26 A
- Advanced Package and Silicon bination for Low r DS(on) and High Efficiency
General Description
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
- Sync FETTM Schottky Body Diode
- MSL1 Robust Package Design
- 100% UIL Tested
- Ro HS pliant
Applications
- Synchronous Rectifier for DC/DC Converters
- Notebook Vcore/ GPU Low Side Switch
- Networking Point of Load Low Side Switch
- Tele Secondary Side Rectification
Top
Bottom
Pin 1
Power 56
D D DD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
ID dv/dt EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source...
