FDMS039N08B datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max RDS(on) = 3.2 mW (Typ.) @ VGS = 10 V, ID = 50 A
* Low FOM RDS(on) * QG
* Low Reverse Recovery Charge, Qrr = 80 nC
* Soft Reverse Recovery Body Diode.

Application

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.

Description

This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features
* Max RDS(on) = 3.2 mW (Typ.) @ VGS = 10 V, ID = 50.

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